The memory of the SST-MRAM is one of the most promising candidates for replacing the traditional DRAM and NAND.
Intel is ready to start mass production of magnetoresistive RAM SST-MRAM (spin-transfer torque magnetoresistive random access memory). For the production of this type of RAM chip maker has adapted the 22-nm FinFET process technology and intends to integrate MRAM cells in a variety of devices, for example, in products for “Internet of things”.
The memory of the SST-MRAM is one of the most promising candidates for replacing the traditional DRAM and NAND. It combines volatility, high speed read/write of data and a tremendous resource. According to the engineer of Intel, made a presentation at a recent conference, ISSCC 2019, embedded MRAM cells have a 10-year period of information storage at a temperature of 200°C and can withstand more than a million switching cycles.
Another advantage of the recessed MRAM from Intel are extremely low rates of marriage. When using 22-nm process technology, the level of yield of cells exceeds 99,9%. According to foreign colleagues, for the production of magnetoresistive memory Intel employs a large number of technologies used for production of 14-nm products, and referred to a 22-nm norms can be called “relaxed” 14-nanometer.